2SC3688

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3688 DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·High speed APPLICATIONS ·Ultrahigh-definition color display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 10 25 150 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ;IB=0A IC=8A ; IB=2.0A IC=8A ; IB=2.0A VCE=1500V; RBE=0V VEB=4V; IC=0A IC=1A ; VCE=5V 8 MIN 800 2SC3688 SYMBOL VCEO(SUS) VCEsat VBEsat ICES IEBO hFE TYP. MAX UNIT V 5.0 1.5 1.0 1.0 V V mA mA Switching times ts tf Storage time Fall time 3.0 0.2 µs µs IC=6.0A IB1=1.2A;IB2=-2.4A VCC=200V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3688 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3688 4