2SC3870

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·Wide area of safe operation APPLICATIONS ·For high speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC3870 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulse) Base current (DC) Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 7 15 3 2 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3870 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA ;IB=0 IC=3A ;IB=0.6A IC=3A ;IB=0.6A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V 15 8 30 MHz MIN 400 1.0 1.5 100 100 TYP. MAX UNIT V V V µA µA SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Switching times ton ts tf Turn-on time Storage time Fall time IC=3A ;IB=0.6A;IB2=-1.2A VCC=150V 0.7 2.0 0..3 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3870 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3