2SC3886

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage APPLICATIONS ·Horizontal deflection output for high resolution display ·High speed switching regulator output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC3886 Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1400 600 5 8 15 4 50 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3886 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Transition frequency CONDITIONS IC=5mA ;IB=0 IC=6A; IB=1.5A IC=6A; IB=1.5A VCB=1400V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IE=0 ; VCB=10V,f=1MHz IE=0.1A ; VCE=10V 8 15 150 3 8 pF MHz MIN 600 5 5 1.0 10 TYP. MAX UNIT V V V mA µA SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE Cob fT Switching times inductive load ts tf Storage time Fall time ICP=6A;IB1=1.2A fH =64kHz LY=120µH;CY=7500pF 2.5 0.1 4.0 0.5 µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3886 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3886 4