2SC3970

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High speed switching ·High VCBO ·Wide area of safe operation APPLICATIONS ·For high breakdown voltate ,high-speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC3970 2SC3970A Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER 2SC3970 Collector-base voltage 2SC3970A Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current TC=25 Collector power dissipation Ta=25 Junction temperature Storage temperature 2 150 -55~150 Open base Open collector Open emitter 900 500 8 1.5 3.0 0.5 25 W V V A A A CONDITIONS VALUE 800 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2SC3970 2SC3970A CONDITIONS IC=10mA , IB=0 IC=0.6A; IB=0.17A IC=0.6A; IB=0.17A VCB=800V; IE=0 2SC3970 2SC3970A SYMBOL V(BR)CEO VCEsat VBEsat MIN 500 TYP. MAX UNIT V 1.0 1.5 V V ICBO Collector cut-off current 0.1 VCB=900V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=0.6A ; VCE=5V IC=0.1A ; VCE=10V;f=1MHz 15 8 20 0.1 mA IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=0.6A; IB1=0.17A IB2=-0.34A;VCC=200V 1.0 3.0 0.3 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3970 2SC3970A Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3970 2SC3970A 4