2SC3979

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3979 DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·High speed switching ·Wide area of safe operation APPLICATIONS ·For high breakdown voltage high-speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Ta=25 SYMBOL VCBO VCEO VEBO IC ICM IB PC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current TC=25 Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 900 800 7 3 5 1 40 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA , IB=0 IC=0.8A ;IB=0.16A IC=0.8A; IB=0.16A VCB=900V; IE=0 VEB=7V; IC=0 IC=0.1A ; VCE=5V IC=0.8A ; VCE=5V IC=0.15A ; VCE=5V 8 6 MIN 800 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT 2SC3979 TYP. MAX UNIT V 1.5 1.5 50 50 V V µA µA 10 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=0.8A ;IB1=0.16A IB2=-0.32A VCC=250V 0.7 2.5 0.3 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3979 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3979 4