2SC4059

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4059 DESCRIPTION ·With TO-247 package ·High voltage;high speed ·Switching power transistor PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 600 450 7 15 30 6 12 130 150 -55~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 0.96 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated voltage ICEO IEBO hFE-1 hFE-2 fT Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency At rated voltage IC=7.5A ; VCE=5V IC=1mA ; VCE=5V IC=1.5A ; VCE=10V 10 5 20 CONDITIONS IC=0.2A; IB=0 IC=7.5A ;IB=1.5A IC=7.5A ;IB=1.5A MIN 450 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO 2SC4059 TYP. MAX UNIT V 1.0 1.5 V V 0.1 mA 0.1 mA MHz Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=7.5A IB1=1.5A; IB2=3.0A VBB2=4V ,RL=20C 0.5 2.0 0.2 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4059 Fig.2 Outline dimensions 3