2SC4109

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4109 DESCRIPTION ·With TO-3PN package ·High reliability ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·400V/16A switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-pulse Base current Ta= PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 140 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 16 32 6 2.5 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4109 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ; RBE=; IC=1mA ; IE=0 IE=1mA ; IC=0 IC=10A; IB=2A IC=10A; IB=2A VCB=400V ;IE=0 VEB=5V; IC=0 IC=2A ; VCE=5V IC=10A ; VCE=5V IC=10mA ; VCE=5V IC=2A ; VCE=10V f=1MHz ; VCB=10V 15 10 10 20 230 MHz pF MIN 400 500 7 0.8 1.5 10 10 50 TYP. MAX UNIT V V V V V µA µA SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB Switching times ton tstg tf Turn-on time Storage time Fall time IC=12A;IB1=2.4A; IB2=-4.8A;RL=16.6C VCC=200V 0.5 2.5 0.3 µs µs µs hFE-1 classifications L 15-30 M 20-40 N 30-50 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4109 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4109 4