0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
2SC4151

2SC4151

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2SC4151 - Silicon NPN Power Transistors - Savantic, Inc.

  • 数据手册
  • 价格&库存
2SC4151 数据手册
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4151 DESCRIPTION ·With ITO-220 package ·Switching power transistor ·Low saturation voltage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 60 40 7 15 30 2 3 30 150 -55~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 4.16 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4151 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge ICEO IEBO hFE fT Collector cut-off current Emitter cut-off current DC current gain Transition frequency At rated volatge IC=7.5A ; VCE=2V IC=1.5A ; VCE=10V 70 50 MHz 0.1 mA 0.1 mA CONDITIONS IC=0.1A ;IB=0 IC=7.5A; IB=0.4A IC=7.5A; IB=0.4A MIN 40 0.3 1.2 TYP. MAX UNIT V V V SYMBOL VCEO(SUS) VCEsat VBEsat ICBO Switching times ton ts tf Turn-on time Storage time Fall time IC=7.5A;IB1=0.75A IB2=0.75A ,RL=4B VBB2=4V 0.3 1.5 0.5 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4151 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3
2SC4151 价格&库存

很抱歉,暂时无法提供与“2SC4151”相匹配的价格&库存,您可以联系我们找货

免费人工找货