2SC4235

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4235 DESCRIPTION ·With TO-247 package ·Switching power transistor ·High breakdown voltage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1200 800 7 3 6 1 2 80 150 -55~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.56 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4235 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated voltage ICEO IEBO hFE-1 hFE-2 fT Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency At rated voltage IC=1.5A ; VCE=5V IC=1mA ; VCE=5V IC=0.3A ; VCE=10V 8 7 8 MHz 0.1 mA 0.1 mA CONDITIONS IC=0.1A; IB=0 IC=1.5A ;IB=0.3A IC=1.5A ;IB=0.3A MIN 800 1.0 1.5 TYP. MAX UNIT V V V SYMBOL VCEO(SUS) VCEsat VBEsat ICBO Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=1.5A IB1=0.3A; IB2=0.6A VBB2=4V ,RL=170C 0.5 3.5 0.3 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4235 Fig.2 Outline dimensions 3