2SC4242

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ,high speed APPLICATIONS ·For use in high voltage ,high speed; power switching in inductive circuit. ·Particulary suited for 115 and 220V switchmode applications such as switching regulators ,inverters ; DC-DC converters PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC4242 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 450 400 8 7 14 2 40 150 -50~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 3.125 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4242 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=0.1A ;IB=0 IC=1mA ;IE=0 IE=1mA; IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=450V ;IE=0 VEB=8V; IC=0 IC=4A ; VCE=5V IC=0.4A ; VCE=10V f=1MHz ; VCB=10V 10 20 50 MHz pF MIN 400 450 8 0.8 1.2 100 100 TYP. MAX UNIT V V V V V µA µA SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT Cob Switching times ton ts tf Turn-on time Storage time Fall time IC=5A, IB1=1A IB2=-1A; VCC=150V RL=30B 1.0 2.5 0.5 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4242 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4242 4