2SC4276

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4276 DESCRIPTION ·With TO-3PN package ·High voltage ,high speed ·Low collector saturation voltage ·High reliability APPLICATIONS ·Switching regulators ·DC-DC convertor ·Solid state relay ·General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 500 400 10 15 5 80 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 1.56 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.2A ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=450V; IE=0 VEB=10V; IC=0 IC=2A ; VCE=5V 25 MIN 400 500 10 2SC4276 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V V 0.8 1.2 100 100 65 V V µA µA Switching times ton ts tf Turn-on time Storage time Fall time IC=7.5A;RL=20A IB1=0.75A; IB2=-1.5A Pw = 20µs; DutyB2% 1.0 2.5 0.5 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4276 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4276 4