2SC4369

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4369 DESCRIPTION ·With TO-220F package ·Complement to type 2SA1658 ·Good linearity of hFE APPLICATIONS ·For general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 30 30 5 3 0.3 15 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SC4369 SYMBOL TYP. MAX UNIT V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Collector-emitter breakdown voltage IC=10mA ; IB=0 IC=2A ;IB=0.2A IC=0.5A ; VCE=2V VCB=20V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=2.5A ; VCE=2V IC=0.5A ; VCE=2V 30 V Collector-emitter saturation voltage 0.8 V Base-emitter on voltage 1.0 V Collector cut-off current 1.0 µA Emitter cut-off current 1.0 µA DC current gain 70 240 DC current gain 25 Transition frequency 100 MHz hFE-1 Classifications O 70-140 Y 120-240 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4369 Fig.2 Outline dimensions 3