SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4369
DESCRIPTION ·With TO-220F package ·Complement to type 2SA1658 ·Good linearity of hFE APPLICATIONS ·For general purpose applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 30 30 5 3 0.3 15 150 -55~150 UNIT V V V A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SC4369
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT
Collector-emitter breakdown voltage
IC=10mA ; IB=0 IC=2A ;IB=0.2A IC=0.5A ; VCE=2V VCB=20V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=2.5A ; VCE=2V IC=0.5A ; VCE=2V
30
V
Collector-emitter saturation voltage
0.8
V
Base-emitter on voltage
1.0
V
Collector cut-off current
1.0
µA
Emitter cut-off current
1.0
µA
DC current gain
70
240
DC current gain
25
Transition frequency
100
MHz
hFE-1 Classifications O 70-140 Y 120-240
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4369
Fig.2 Outline dimensions
3
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