2SC4427

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4427 DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high reliability. ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3 150 -55~150 PW 300µs, duty cycle 10% Open emitter Open base Open collector CONDITIONS VALUE 1100 800 7 4.5 15 2 50 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4427 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA; IE=0 IC=5mA; RBE== IE=1mA; IC=0 IC=2A;IB=0.4A IC=2A;IB=0.4A VCB=800V; IE=0 VEB=5V; IC=0 IC=0.3A ; VCE=5V IC=1.5A ; VCE=5V IC=0.3A ; VCE=10V VCB=10V;f=1MHz 10 8 15 90 MHz pF MIN 1100 800 7 2.0 1.5 10 10 40 TYP. MAX UNIT V V V V V µA µA SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB Switching times ton tstg tf Turn-on time Storage time Fall time IC=3A;RL=133C IB1=0.6A; IB2=-1.2A VCC=400V 0.5 3.0 0.3 µs µs µs hFE-1 classifications K 10-20 L 15-30 M 20-40 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4427 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4427 4