SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4550
DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·Suited for use in drivers such as DC-DC converters and actuators
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PT Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 100 60 7 7 14 3.5 2.0 W UNIT V V V A A A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=4A; IB=0.4A,L=1mH IC=4A; IB=0.2 A IC=6A; IB=0.3A IC=4A; IB=0.2 A IC=6A; IB=0.3A VCB=60V; IE=0 VCE=60V; VBE=-1.5V Ta=125 VEB=5V; IC=0 IC=0.7A ; VCE=2V IC=1.5A ; VCE=2V IC=4A ; VCE=2V IE=0; VCB=10V;f=1MHz IC=1A ; VCE=10V 100 100 60 MIN 60 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 COB fT
2SC4550
TYP.
MAX
UNIT V
0.3 0.5 1.2 1.5 10 10 1.0 10
V V V V µA µA mA µA
200
400
100 150
pF MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=4A;RL=12.5B IB1=-IB2=0.2A VCCC50V 0.3 1.5 0.3 µs µs µs
hFE-2 classifications M 100-200 L 150-300 K 200-400
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4550
Fig.2 outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4550
4
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