2SC4582

2SC4582

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2SC4582 - Silicon NPN Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
2SC4582 数据手册
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4582 DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 600 450 7 15 30 6 12 75 150 -55~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.67 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4582 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter sustaining voltage Emitter cut-off current Collector cut-off current At rated voltage ICEO hFE-1 hFE-2 fT Collector cut-off current DC current gain DC current gain Transition frequency IC=7.5 A ; VCE=5V IC=1mA ; VCE=5V IC=1.5A ; VCE=10V 10 5 20 MHz 0.1 mA CONDITIONS IC=7.5A;IB=1.5 A IC=7.5A;IB=1.5 A IC=0.2A;IB=0 At rated voltage 450 0.1 MIN TYP. MAX 1.0 1.5 UNIT V V V mA SYMBOL VCEsat VBEsat VCEO(SUS) IEBO ICBO Switching times ton tstg tf Turn-on time Storage time Fall time IC=7.5A;RL=20B IB1=1.5A; IB2=3A VBB2=4V 0.5 2.0 0.2 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4582 Fig.2 Outline dimensions 3
2SC4582
1. 物料型号:2SC4582,这是一个SavantIC Semiconductor生产的硅NPN功率晶体管。

2. 器件简介:该晶体管具有高电压、高速特性,适用于开关电源晶体管,封装为TO-3PML。

3. 引脚分配: - 引脚1:基极(Base) - 引脚2:集电极(Collector) - 引脚3:发射极(Emitter)

4. 参数特性: - 集电极-基极电压(VCBO):600V,开路发射极 - 集电极-发射极电压(VCEO):450V,开路基极 - 发射极-基极电压(VEBO):7V,开路集电极 - 集电极电流(Ic):15A - 集电极峰值电流(ICM):30A - 基极电流(IB):6A - 基极峰值电流(IBM):12A - 集电极功耗(Pc):75W,Tc=25°C - 结温(Tj):150°C - 存储温度(Tstg):-55°C至150°C

5. 功能详解: - 饱和电压(VCEsat):在Ic=7.5A,Ib=1.5A条件下,典型值为1.0V - 基极-发射极饱和电压(VBEsat):在Ic=7.5A,Ib=1.5A条件下,典型值为1.5V - 维持电压(VCEO(SUS)):在Ic=0.2A,Ib=0条件下,最小值为450V - 发射极截止电流(IEBO):在额定电压下,最大值为0.1mA - 集电极截止电流(ICBO):在额定电压下,最大值为0.1mA - 直流电流增益(hFE-1):在Ic=7.5A,Vce=5V条件下,最小值为10 - 直流电流增益(hFE-2):在Ic=1mA,Vce=5V条件下,最小值为5 - 过渡频率(fT):在Ic=1.5A,Vce=10V条件下,典型值为20MHz - 导通时间(ton):在Ic=7.5A,RL=20Ω,VBB2=4V条件下,最大值为0.5s - 存储时间(tstg):最大值为2.0us - 关断时间(t):最大值为0.2us

6. 应用信息:适用于需要高电压、高速开关的电源领域。

7. 封装信息:TO-3PML封装,具体尺寸图可在文档中查看。
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