2SC4881

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4881 DESCRIPTION ·With TO-220F package ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 20 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 60 50 5 5 8 1 2.0 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4881 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ;IB=0 IC=2.5A; IB=0.125A IC=2.5A; IB=0.125A VCB=50V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=1V IC=2.5A ; VCE=1V IC=1A ; VCE=4V IE=0; f=1MHz;VCB=10V 100 60 100 45 MHz pF MIN 50 0.4 1.3 1 1 320 TYP. MAX UNIT V V V µA µA SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB Switching times ton ts tf Turn-on time Storage time Fall time IC=2.5A IB1=-IB2=0.125A VCC=30V ,RL=12@ Duty cycleA1% 0.1 0.8 0.1 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4881 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4881 4