2SC4928

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4928 DESCRIPTION ·With TO-3PL package ·High speed switching ·High breakdown voltage,high current APPLICATIONS ·Character display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IC(surge) PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 15 20 150 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SC4928 SYMBOL TYP. MAX UNIT V(BR )CEO Collector-emitter breakdown voltage IC=10mA; RBE=9 800 V V(BR )EBO Emitter-base breakdown voltage IE=10mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=12A ;IB=3A 5.0 V VBEsat Base-emitter saturation voltage IC=12A ;IB=3A 1.5 V ICES Collector cut-off current VCB=1500V; RBE=0 500 µA IEBO Emitter cut-off current VEB=6V; IC=0 500 µA hFE DC current gain IC=1A ; VCE=5V IC=8A ;IB1=1.4A;IB2?-2.5A fH=31.5kHz 38 tf Fall time 0.5 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4928 Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3