2SC4941

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4941 DESCRIPTION ·With TO-3PML package ·Switching power transistor ·High breakdown voltage PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 800 7 6 12 3 6 65 150 -55~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 1.92 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-base voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ;IB=0 IC=1mA ;IE=0 IC=3A ;IB=0.6A IC=3A; IB=0.6A VCB=1200V; IE=0 VCE=RatedVCEO; IB=0 VEB=RatedVEBO; IC=0 IC=1A ; VCE=5V IC=1mA ; VCE=5V IC=0.6A ; VCE=10V 15 7 MIN 800 1500 SYMBOL VCEO(SUS) VCBO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT 2SC4941 TYP. MAX UNIT V V 0.5 1.5 100 100 100 V V µA µA µA 8 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=3A IB1=0.6A; IB2=-1.2A VBB2=4V RL=85C 0.5 3.5 0.3 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4941 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3