2SC5149

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for high resolution display,colorTV ·High speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC5149 Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 8 16 4 50 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Forward voltage(damper diode) Transition frequency CONDITIONS IC=400mA ;IB=0 IC=5A ;IB=1.3A IC=5A; IB=1.3A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IE=0 ; VCB=10V,f=1MHz IF=5A IE=0.1A ; VCE=10V 66 8 3.8 MIN 5 SYMBOL V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob VF fT 2SC5149 TYP. MAX UNIT V 5 1 1.3 1 200 25 8 110 1.35 2 1.8 V V mA mA pF V MHz Switching times (inductive load) ts tf Storage time Fall time 4 0.2 6 0.5 µs µs ICP=5A;IB1(end) =1.1A fH=31.5kHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5149 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5149 4