2SC5150

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5150 DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage ·Low saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,colorTV ·High speed switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1700 700 5 10 20 5 50 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=10mA ;IB=0 IC=6A ;IB=1.5A IC=6A ;IB=1.5A VCB=1700V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IE=0 ; VCB=10V,f=1MHz IE=0.1A ; VCE=10V 10 4 MIN 700 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT 2SC5150 TYP. MAX UNIT V 3 0.9 1.2 1 10 28 8.5 185 2 V V mA µA pF MHz Switching times (inductive load) ts tf Storage time Fall time 2.5 0.15 4 0.3 µs µs ICP=5A;IB1(end) =1A fH=64kHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5150 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5150 4