2SC5287

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5287 DESCRIPTION ·With TO-3PN package ·High voltage,high speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 900 550 7 5 10 2.5 80 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ;IB=0 IC=1.8A; IB=0.36A IC=1.8A; IB=0.36A VCB=800V; IE=0 VEB=7V; IC=0 IC=1.8A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IE=-0.35A ; VCE=12V 10 MIN 550 2SC5287 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V 0.5 1.2 100 100 25 50 6 V V µA µA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=1.8A; RL=139C IB1=0.27A; IB2=-0.9A VCC=250V 0.7 4.0 0.5 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5287 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5287 4