2SC5417

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5417 DESCRIPTION ·With TO-220F package ·High breakdown voltage ·High reliability APPLICATIONS ·For inverter lighting applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 1200 600 9 3 6 2 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A; IB=0 IC=1.5A; IB=0.3 A IC=1.5A; IB=0.3 A VCB=600V; IE=0 VCE=1200V; RBE=0 VEB=9V; IC=0 IC=0.1A ; VCE=5V IC=1.0A ; VCE=5V 30 10 MIN 600 2SC5417 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICES IEBO hFE-1 hFE-2 TYP. MAX UNIT V 1.0 1.5 10 1.0 1.0 50 V V µA mA mA Switching times ts tf Storage time IC=1.5A;IB1=0.3A ;IB2=-0.6A Fall time 0.15 µs 2.5 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5417 Fig.2 outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5417 4