2SC5669

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5669 DESCRIPTION ·With TO-3PN package ·Complement to type 2SA2031 ·Wide area of safe operation ·Large current capacitance APPLICATIONS ·For audio frequency output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collectorl power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 140 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 250 230 6 15 30 2.5 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=50mA; RBE=; IC=5mA; IE=0 IE=5mA; IC=0 IC=7.5 A;IB=0.75A IC=7.5A ; VCE=5V VCB=250V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=7.5A ; VCE=5V IE=0 ; VCB=10V,f=1MHz IC=1A ; VCE=5V 60 35 200 15 MIN 230 250 6 0.2 2SC5669 SYMBOL V(BR)CEO V(BR)CBO V(BREBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT TYP. MAX UNIT V V V 2.0 1.5 100 100 160 V V µA µA pF MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=7.5A;RL=6.67B IB1=-IB2=0.75A VCC=50V 0.56 3.3 0.4 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5669 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5669 4