2SC5895

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5895 DESCRIPTION ·With TO-220F package ·High speed switching ·Low collector saturation voltage APPLICATIONS ·Power supply for audio and visual equipments such as TVs and VCRs ·Industrial equipments such as DC-DC converters PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 15 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 60 60 6 2 4 2 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Collector-emitter breakdown voltage Collector cut-off current Collector cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=2A; IB=0.25 A IC=10mA; IB=0 VCB=60V; IE=0 VCE=60V; IB=0 IC=0.2A ; VCE=4V IC=1A ; VCE=4V IC=2A ; VCE=4V IC=0.1A ; VCB=10V;f=10MHz 60 80 30 60 MIN 2SC5895 SYMBOL VCEsat V(BR)CEO ICBO ICEO hFE-1 hFE-2 hFE-3 fT TYP. MAX 0.5 UNIT V V 100 100 µA µA 250 100 MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=1A;IB1=-IB2=0.1A VCC=50V 0.2 0.7 0.15 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5895 Fig.2 outline dimensions 3