2SC792

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC792 DESCRIPTION ·W ith TO-3 package ·High breakdown voltage APPLICATIONS ·For voltage regulator,inverter,switching mode power supply applications PINNING(see Fig.2) PI N 1 2 3 Ba s e Em i t t e r Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=? ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25? CONDITIONS Open emitter Open base Open collector VALUE 400 300 5 1 .5 50 150 -55~150 UNIT V V V A W ? ? SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS M IN 2SC792 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A 5 .0 V VBEsat Base-emitter saturation voltage IC=1.5A; IB=0.3A 1 .5 V ICBO Collector cut-off current VCB=300V; IE=0 50 µA IEBO Emitter cut-off current VEB=5V; IC=0 50 µA hF E DC current gain IC=0.3A ; VCE=10V 30 200 fT Transition frequency IC=0.1A ; VCE=10V 10 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC792 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3