2SD1136

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1136 DESCRIPTION ·With TO-220C package ·High collector-base breakdown voltage : VCBO=200V(min) APPLICATIONS ·For power switching and TV vertical deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -45~150 Open emitter Open base Open collector CONDITIONS VALUE 200 80 5 4 5 1.8 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1136 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=50mA; IB=0 IE=1mA; IC=0 IC=4 A;IB=0.4 A IC=4 A;IB=0.4 A VCE=200V; IB=0 VEB=5V; IC=0 IC=4A ; VCE=5V 20 MIN 80 5 1.5 1.5 50 50 TYP. MAX UNIT V V V V SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICEO IEBO hFE 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1136 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3