2SD1137

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1137 DESCRIPTION ·With TO-220C package ·Complement to type 2SB860 APPLICATIONS ·Low frequency power amplifier TV vertical deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -45~150 CONDITIONS Open emitter Open base Open collector VALUE 100 100 4 4 5 1.8 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1137 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=50mA; RBE=9 IE=1mA; IC=0 IC=1 A;IB=0.1 A VCE=80V; RBE=9 VEB=3.5V; IC=0 IC=0.5A ; VCE=4V IC=50mA ; VCE=4V 50 25 MIN 100 4 1.0 100 50 250 350 TYP. MAX UNIT V V V SYMBOL V(BR)CEO V(BR)EBO VCEsat ICEO IEBO hFE-1 hFE-2 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1137 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1137 4 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1137 5