2SD1163

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1163,2SD1163A ·Wit DESCRIPTION h TO-220 package ·Low collector saturation voltage APPLICATIONS ·TV horizontal deflection output, PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SD1163 VCBO Collector-base voltage 2SD1163A 2SD1163 VCEO Collector-emitter voltage 2SD1163A VEBO IC ICM IC(surge) PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector current-surge Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 150 6 7 10 20 40 150 -55~150 V A A A W Open emitter 350 120 V CONDITIONS VALUE 300 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1163,2SD1163A CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SD1163 IC=10mA ;RBE=: 2SD1163A IE=10mA ;IC=0 150 6 2.0 IC=5A, IB=0.5A 2SD1163A IC=5A, IB=0.5A VCB=300V;IE=0 VCB=350V;IE=0 IC=5A ; VCE=5V 25 1.0 1.2 5 5 V mA mA V V CONDITIONS MIN 120 V TYP MAX UNIT SYMBOL V(BR)CEO Collector-emitter breakdown voltage V(BR)EBO Emitter-base breakdown voltage 2SD1163 VCEsat Collector-emitter saturation voltage VBEsat Base-emitter saturation voltage 2SD1163 2SD1163A ICBO Collector cut-offcurrent hFE DC current gain Switching times tf Fall time ICM=3.5A;IB1 =0.45A 0.5 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1163,2SD1163A Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3