2SD1208

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1208 DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·High DC current gain ·Darlington APPLICATIONS ·Power regulator for line operated TV PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 60±15 60±15 6 5 20 100 150 -65~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Emitter cut-off current DC current gain CONDITIONS IC=100mA ;IB=0 IC=100mA ;IE=0 IC=0.5A ;IB=1mA IC=1A; IB=1mA IC=0.5A;VCE=5V VEB=6V; IC=0 IC=0.5A ; VCE=5V 2000 MIN 45 45 2SD1208 SYMBOL VCEO VCBO VCEsat-1 VCEsat-2 VBE IEBO hFE TYP. MAX 75 75 1.5 2.5 1.8 0.1 20000 UNIT V V V V V mA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1208 Fig.2 outline dimentions 3