2SD1236L

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1236L DESCRIPTION ·With TO-220C package ·Complement to type 2SB920L ·Low collector saturation voltage ·Large current capacity. APPLICATIONS ·Relay drivers,high speed inverters, converters,and other general high-current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak TC=25 PC Collector dissipation 1.75 Tj Tstg Junction temperature Storage temperature 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 90 80 6 5 9 30 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=; IC=1mA ;IE=0 IE=1mA; IC=0 IC=3A; IB=0.3A VCB=80V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=3A ; VCE=2V IC=1A ; VCE=5V 70 30 MIN 80 90 6 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT 2SD1236L TYP. MAX UNIT V V V 0.4 100 100 280 V µA µA 20 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=10IB1=-10IB2=2A VCC=50V,RL=25C 0.1 1.2 0.4 µs µs µs hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1236L Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1236L 4