2SD1238L

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1238L DESCRIPTION ·With TO-3PN package ·Low collector saturation voltage ·Wide area of safe operation ·Complement to type 2SB922L APPLICATIONS ·Suitable for relay drivers, high-speed inverters,converters, and other largecurrent switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 90 80 6 12 20 80 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=; IC=1mA; IE=0 IE=1mA; IC=0 IC=6A; IB=0.6A VCB=80V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=6A ; VCE=2V IC=1A ; VCE=5V 70 30 MIN 80 90 6 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT 2SD1238L TYP. MAX UNIT V V V 0.4 0.1 0.1 280 V mA mA 20 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=5A;IB1=-IB2=-0.5A VCC=50V;RL=10D 0.2 1.7 0.2 µs µs µs hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1238L Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1238L 4