2SD1271

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1271 2SD1271A DESCRIPTION ·With TO-220Fa package ·Complement to type 2SB946/946A ·Low collector saturation voltage ·Good linearity of hFE ·Large collector current IC APPLICATIONS ·For power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter ABSOLUTE MAXIMUM RATINGS AT Ta=25 SYMBOL VCBO PARAMETER Collector-base voltage 2SD1271 2SD1271A VCEO VEBO IC ICM PC Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak TC=25 Collector power dissipation Ta=25 Junction temperature Storage temperature 2 150 -55~150 2SD1271 2SD1271A Open collector Open base 100 7 7 15 40 w V A A CONDITIONS Open emitter 150 80 V VALUE 130 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SD1271 IC=10mA , IB=0 2SD1271A IC=5A ;IB=0.25A IC=5A ;IB=0.25A VCB=100V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=2V IC=3A ; VCE=2V IC=0.5A ; VCE=10V CONDITIONS SYMBOL 2SD1271 2SD1271A MIN 80 TYP. MAX UNIT VCEO Collector-emitter voltage V 100 0.5 1.5 10 50 45 60 30 260 MHz V V µA µA VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Switching times ton ts tf Turn-on time Storage time Fall time IC=3A ;IB1=-IB2=0.3A VCC=50V 0.5 1.5 0.1 µs µs µs hFE-2 Classifications R 60-120 Q 90-180 P 130-260 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1271 2SD1271A Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1271 2SD1271A 4 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1271 2SD1271A 5