2SD1279

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1279 DESCRIPTION ·With TO-3 package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·Color TV horizontal deflection output applications ·Switching regulator applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1400 600 5 10 5 50 150 -65~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SD1279 SYMBOL TYP. MAX UNIT VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE fT COB tf Collector-emitter sustaining voltage IC=100mA ;IB=0 IC=8A; IB=2A IC=8A; IB=2A VCB=500V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz 600 V Collector-emitter saturation voltage 5.0 V Base-emitter saturation voltage 1.6 V Collector cut-off current 10 µA Emitter cut-off current 1.0 mA DC current gain 8 22 Transition frequency 3 MHz Collector output capacitance 165 pF Fall time ICP=7A ;IB1(end)=1.5A 1.0 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1279 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3