2SD1296

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1296 ·Wit DESCRIPTION h TO-3PN package ·High DC current gain ·Low saturation voltage APPLICATIONS ·For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PT Total power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3.0 150 -55~150 CONDITIONS Open emitter Open base Open collector MAX 150 100 8 15 30 100 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=30mA ;IB=0 IC=15A ;IB=30mA IC=15A ;IB=30mA VCB=100V; IE=0 VEB=5V; IC=0 IC=15A ; VCE=2V 1000 MIN 100 2SD1296 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V 1.5 2.2 10 5 30000 V V µA mA Switching times ton tstg tf Turn-on time Storage time Fall time IC=15A; IB1=-IB2=30mA VCC=60V;RL=4@ 1.0 5.0 2.0 µs µs µs hFE Classifications M 1000-3000 L 2000-5000 K 4000-10000 J 8000-30000 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1296 Fig.2 outline dimensions 3