2SD1351

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1351 DESCRIPTION ·With TO-220C package ·Complement to type 2SB988 ·Low collector saturation voltage APPLICATIONS ·For general purpose application PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -50~150 Open emitter Open base Open collector CONDITIONS VALUE 60 60 7 3 0.5 2 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=50mA; IB=0 IC=2A; IB=0.2A IC=0.5A ; VCE=5V VCB=60V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V IE=0; VCB=10V,f=1MHz IC=0.5A ; VCE=5V 60 35 MIN 60 2SD1351 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE Cob fT TYP. MAX UNIT V 0.25 0.7 1.0 1.0 0.1 0.1 300 V V mA mA pF MHz 3.0 Switching times ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=0.2A VCC=30V;RL=15A Duty cycleB1% 0.65 1.30 0.65 µs µs µs hFE Classifications O 60-120 Y 100-200 GR 150-300 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1351 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3