2SD1396

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1396 DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching APPLICATIONS ·For horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7 2.5 10 80 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector- emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Fall time Diode forward voltage CONDITIONS IC=100mA; RBE=< IC=5mA; IE=0 IE=200mA; IC=0 IC=2A; IB=0.6A IC=2A; IB=0.6A VCB=800V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=10V IC=2A;IB1=0.6A; IB2=-1.2A, VCC=200V; RL=100C IEC=2.5A 40 8 MIN 800 1500 7 2SD1396 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT tf VF TYP. MAX UNIT V V V 8.0 1.5 10 130 V V µA mA 3 0.7 2.0 MHz µs V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1396 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3