2SD1427

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1427 DESCRIPTION ·With TO-3PH package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PH) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 5 2.5 80 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 1.56 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain Transition freuqency Output capacitance Diode forward voltage Fall time CONDITIONS IE=200mA; IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=500V; IE=0 IC=1A ; VCE=5V IC=0.1A ; VCE=10V;f=1MHz IE=0 ; VCB=10V;f=1MHz IF=5A IC=4A;IB1=0.8A 8 MIN 5 2SD1427 SYMBOL V(BR)EBO VCEsat VBEsat ICBO hFE fT COB VF tf TYP. MAX UNIT V 5.0 1.5 10 V V µA 3 165 2.0 1.0 MHz pF V µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1427 Fig.2 outline dimensions 3