2SD1428

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1428 DESCRIPTION ·With TO-3PH package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in color TV horizontal output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PH) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IE PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 6 -6 80 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain Transition freuqency Output capacitance Diode forward voltage Fall time CONDITIONS IE=200mA; IC=0 IC=5A; IB=1A IC=5A; IB=1A VCB=500V; IE=0 IC=1A ; VCE=5V IC=0.1A ; VCE=10V;f=1MHz IE=0 ; VCB=10V;f=1MHz IF=6A IC=5A;IB1=1A 8 MIN 5 2SD1428 SYMBOL V(BR)EBO VCEsat VBEsat ICBO hFE fT COB VF tf TYP. MAX UNIT V 5.0 1.5 10 V V µA 3 165 2.0 1.0 MHz pF V µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1428 Fig.2 outline dimensions 3