2SD1439

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1439 DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VEBO IC ICM IBM PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open collector VALUE 1500 5 3 10 3.5 50 130 -55~130 UNIT V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain Storage time IC=2A IBend=0.75A,LLeak=5µH Fall time Diode forward voltage IF=-4A,IB=0 CONDITIONS IE=500mA; IC=0 IC=2A; IB=0.75A IC=2A; IB=0.75A VCB=750V; IE=0 VCB=1500V; IE=0 IC=2A ; VCE=10V 4 MIN 5 2SD1439 SYMBOL V(BR)EBO VCEsat VBEsat ICBO ICBO hFE ts tf VF TYP. MAX UNIT V 5.0 1.5 50 1 12 7.0 0.75 2.2 V V µA mA µs µs V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1439 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3