2SD1441

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1441 DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VEBO IC ICM IBM PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open collector VALUE 1500 5 4 15 3.5 70 130 -55~130 UNIT V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain Storage time Fall time Diode forward voltage CONDITIONS IE=500mA; IC=0 IC=3A; IB=1A IC=3A; IB=1A VCB=750V; IE=0 VCB=1500V; IE=0 IC=3A ; VCE=10V 5 4 MIN 5 2SD1441 SYMBOL V(BR)EBO VCEsat VBEsat ICBO ICBO hFE ts tf VF TYP. MAX UNIT V 1.0 1.5 50 1 15 9 0.8 2.2 V V µA mA IC=3A IBend=1A,LLeak=5µH µs µs V IF=-4A,IB=0 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1441 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3