2SD1445A

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1445 2SD1445A DESCRIPTION ·With TO-220Fa package ·Complement to type 2SB948/948A ·High speed switching ·Low collector saturation voltage APPLICATIONS ·For power amplification,power switching and low-voltage switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SD1445 VCBO Collector-base voltage 2SD1445A 2SD1445 VCEO Collector-emitter voltage 2SD1445A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -55~150 Open collector Open base 40 5 10 20 2 W V A A Open emitter 50 20 V CONDITIONS VALUE 40 V UNIT 1 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SD1445 IC=10mA IB=0 2SD1445A IC=10A ;IB=0.33A IC=10A; IB=0.33A VCB=40V; IE=0 CONDITIONS SYMBOL 2SD1445 2SD1445A MIN 20 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 40 0.6 1.5 V V VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current 2SD1445 2SD1445A ICBO 50 VCB=50V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=2V IC=3A ; VCE=2V IC=0.5A; VCE=10V,f=10MHz IE=0; f=1MHz ; VCB=10V 45 90 120 200 260 50 µA IEBO hFE-1 hFE-2 fT COB Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance µA MHz pF Switching times ton tstg tf Trun-on time Storage time Fall time IC=3A IB1=0.1A, IB2=-0.1A VCC=20V 0.3 0.4 0.1 µs µs µs hFE-2 Classifications Q 90-180 P 130-260 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1445 2SD1445A Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1445 2SD1445A 4 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1445 2SD1445A 5