2SD1446

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1446 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·High collector to base voltage VCBO ·DARLINGTON APPLICATIONS ·For power amplification PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2.0 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 500 400 5 6 10 40 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1446 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)EBO VCEO(SUS) VCEsat VBEsat ICBO hFE fT Emitter-base breakdown voltage IE=0.1A; IC=0 IC=2A; L=10mH IC=3A ;IB=0.06A IC=3A ;IB=0.06A VCB=350V; IE=0 IC=2A ; VCE=2V IC=1A ; VCE=10V; 5 V Collector-emitter sustaining voltage 400 V Collector-emitter saturation voltage 1.5 V Base-emitter saturation voltage 2.5 V Collector cut-off current 100 µA DC current gain 500 Transition frequency 15 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1446 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3