2SD1451

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1451 DESCRIPTION ·With TO-3PN package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current (DC) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open collector VALUE 1500 6 1.5 50 150 -45~150 UNIT V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain Diode forward voltage CONDITIONS IE=200mA; IC=0 IC=1.2A; IB=0.3A IC=1.2A; IB=0.3A VCB=1500V; IE=0 IC=0.3A ; VCE=5V IF=1.5A 6 MIN 6 2SD1451 SYMBOL V(BR)EBO VCEsat VBEsat ICBO hFE VF TYP. MAX UNIT V 5.0 1.5 0.5 V V mA 2.2 V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1451 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3