2SD1486

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1486 DESCRIPTION ·With TO-3PFa package ·Complement to type 2SB1055 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 120 120 5 6 10 70 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=4A ;IB=0.4A IC=4A ; VCE=5V VCB=120V; IE=0 VEB=3V; IC=0 IC=20mA ; VCE=5V IC=1A ; VCE=5V IC=4A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.5A ; VCE=-5V 20 40 20 MIN 2SD1486 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE -2 hFE -3 COB fT TYP. MAX 2.0 1.8 50 50 UNIT V V µA µA 200 230 20 pF MHz hFE-2 classifications R 40-80 Q 60-120 P 100-200 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1486 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1486 4