2SD1496

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1496 DESCRIPTION ·With TO-3PN package ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·High voltage power switching TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IC(surge) PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 6 5 16 50 150 -45~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Fall time CONDITIONS IE=10mA; IC=0 IC=10mA; RBE=9 IC=4.5A; IB=1.2A IC=4.5A; IB=1.2A VCE=1500V; VBE=1.5V VEB=6V; IC=0 IC=0.3A ; VCE=5V IC=3A;IB1=0.7A, IB2=-2.7A; LB=0 10 MIN 6 600 2SD1496 SYMBOL V(BR)EBO V(BR)CEO VCEsat VBEsat ICEX IEBO hFE tf TYP. MAX UNIT V V 5.0 1.5 1.0 1.0 30 2.3 V V mA mA µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1496 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3