2SD1505

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1505 DESCRIPTION ·With TO-220 package ·Complement to type 2SB1064 ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 60 50 5 3 4.5 0.5 30 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA ,IB=0 IC=50µA ,IE=0 IE=50µA ,IC=0 IC=2A; IB=0.2A IC=2A; IB=0.2A VCB=40V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=3V IE=0 ; VCB=10V,f=1MHz IC=0.5A ; VCE=5V 60 MIN 50 60 5 2SD1505 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V V V 1.0 1.5 1.0 1.0 320 40 90 V V µA µA pF MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1505 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3