2SD1541

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1541 DESCRIPTION ·With TO-3PFa package ·High voltage ,and high reliability ·Built-in damper diode ·High speed switching ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VEBO IC ICM IBM PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open collector VALUE 1500 5 3 10 3.5 50 130 -55~130 UNIT V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1541 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)EBO Emitter-base breakdown voltage IE=500mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.75A 5.0 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.75A 1.5 V VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 50 µA 1 mA hFE DC current gain IC=2A ; VCE=10V 4 12 VF Diode forward voltage IC=-4A 2.2 V Switching times tstg Storage time IC=2A IBend=0.75A;LLeak=5µH 3.0 7.0 µs tf Fall time 0.75 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1541 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3