SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1541
DESCRIPTION ·With TO-3PFa package ·High voltage ,and high reliability ·Built-in damper diode ·High speed switching ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VEBO IC ICM IBM PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open collector VALUE 1500 5 3 10 3.5 50 130 -55~130 UNIT V V A A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1541
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT
SYMBOL
V(BR)EBO
Emitter-base breakdown voltage
IE=500mA ;IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=0.75A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.75A
1.5
V
VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0
50
µA
1
mA
hFE
DC current gain
IC=2A ; VCE=10V
4
12
VF
Diode forward voltage
IC=-4A
2.2
V
Switching times
tstg
Storage time IC=2A IBend=0.75A;LLeak=5µH
3.0
7.0
µs
tf
Fall time
0.75
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1541
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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