2SD1554

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1554 DESCRIPTION ·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·For color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 3.5 1 40 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Diode forward voltage Fall time CONDITIONS IE=0.2A , IC=0 IC=3A; IB=0.8A IC=3A ;IB=0.8A VCB=500V; IE=0 IC=0.5A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=3.5A ICP=3A ;IB1(end)=0.8A 8 3 95 MIN 5 2SD1554 SYMBOL V(BR)EBO VCEsat VBEsat ICBO hFE fT COB VF tf TYP. MAX UNIT V 5.0 8.0 1.5 10 V V µA MHz pF 2.0 V µs 0.5 1.0 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1554 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3