2SD1585

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1585 DESCRIPTION ·With TO-220Fa package ·VCEO 60V;VEBO 7V;IC(DC) 3.0A ·Complement to type 2SB1094 APPLICATIONS ·For use in audio frequency power amplifier and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 15 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 60 60 7 3 5 0.6 2.0 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=30mA; IB=0 IC=2A; IB=0.2A IC=2A ;IB=0.2A VCB=60V; IE=0 VEB=7V; IC=0 IC=50mA ; VCE=5V IC=0.5A ; VCE=5V IC=0.1A; VCE=5V f=1MHz ; VCB=10V 20 40 MIN 60 2SD1585 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V 1.5 2.0 10 10 V V µA µA 200 16 48 MHz pF hFE-2 Classifications M 40-80 L 60-120 K 100-200 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1585 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3