2SD1589

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1589 DESCRIPTION ·With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1098 ·Low speed switching APPLICATIONS ·Low frequency power amplifier ·Low speed switching industrial use PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 20 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 150 100 7 5 8 0.5 1.5 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.1A , IB=0 IC=3A ;IB=3mA IC=3A; IB=3mA VCB=100V ;IE=0 IC=3A ; VCE=2V IC=5A ; VCE=2V 2000 500 MIN 60 TYP. 2SD1589 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO hFE-1 hFE-2 MAX UNIT V 1.5 2.0 1 15000 V V µA Switching times ton ts tf Turn-on time Storage time Fall time IC=3A ;IB1=3mA IB2=-3mA; VCCB50V RL=16.7C 1.0 3.5 1.2 µs µs µs hFE Classifications R 2000-5000 O 3000-7000 Y 5000-15000 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1589 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3